Bo Shen

Chairman of SinoGaN Semiconductor

Publication Topics

Power Devices,p-GaN Gate HEMT,Gate Region,Thermal Annealing,Buffer Layer,Degradation Kinetics,Gallium Nitride,I-V Curves,Schottky Barrier,Hole Injection,Active Layer,Depletion Region,Drain Current,Effective Screening,Inductively Coupled Plasma,Sapphire Substrate,Schottky Diode,Trapping,Atomic Force Microscopy,Buried Layer,Doping Concentration,Dynamic Performance,Energy Band,Energy Barrier,Forward Bias

Biography

Bo Shen received the bachelor's degree from Nanjing University, Nanjing, China, in 1985, the master's degree from the University of Science and Technology of China, Hefei, China, in 1988, and the Ph.D. degree from Tohoku University, Sendai, Japan, in 1995. He is currently the Vice Chairman of China Advanced Semiconductor Industry Innovation Alliance, the Deputy Director of Science Department, Peking University, Beijing, China, the Director of Wide Band Gap Semiconductor Research Center, a Distinguished Professor of Yangtze Scholar in Ministry of Education, a laureate of NSFC Outstanding Youth Funding, and a Chief Scientist of the National 973 Program. He enjoys the State Council Special Allowance in China. He presided more than 20 national scientific research projects, authored or coauthored more than 300 academic papers and gave more than 30 invited talks on academic conferences. He was awarded the second prize of National Technological Invention Award, the second prize of National Natural Science Award, and a number of provincial and ministerial awards.

Lisheng Zhang

General Manager and Production Director

Biography

Zhang Lisheng is a Ph.D. graduate from Peking University. He has been engaged in the research and development of AlN, high Al composition AlGaN, and deep ultraviolet LED epitaxy for nearly a decade. The epitaxial technology for deep ultraviolet optoelectronic materials on nano-patterned sapphire substrates developed by him has become the industry standard.

Xiangning KANG

Engineering Director of SinoGaN Semiconductor

Biography

Kang Xiangning, born in 1975, holds a Ph.D. degree and has completed her post-doctoral research at Peking University. She is a senior engineer specializing in the fabrication and industrial development of nitride optoelectronic devices. She has served as the project leader for the Key Special Project under the 863 Program and has been a core member participating in the "973" Program and Key R&D projects.

With extensive experience in the research and development of semiconductor light-emitting devices, Kang Xiangning has made significant contributions in this field.

Zhixin Qin

Fabrication Director of SinoGaN Semiconductor

Biography

Zhixin Qin, born in 1958, holds a Ph.D. degree from Chiba University in Japan and currently serves as an Associate Professor. He has dedicated his career to the research and industrialization of nitride semiconductor optoelectronic materials and devices. Zhixin Qin has achieved a series of research breakthroughs in the material properties and device physics of AlGaN-based deep ultraviolet light-emitting devices. He has published over 100 research papers and holds more than 20 invention patents.

Fujun Xu

UVC epitaxy wafer R&D Director of SinoGaN Semiconductor

Biography

Fujun Xu, born in 1979, holds a Ph.D. degree and currently serves as an Associate Professor and Ph.D. supervisor. He is primarily engaged in research on AlGaN-based deep ultraviolet light-emitting materials and devices, and has achieved significant breakthroughs in the development of high-performance deep ultraviolet LEDs. Xu Fujun has led four projects funded by the National Natural Science Foundation and participated in two national key R&D programs. He has published over 40 research papers and has applied for/granted 15 national invention patents. 

Xuelin Yang

GaN-on-Si epitaxy wafer R&D Director of SinoGaN Semiconductor

Biography

Xuelin Yang, born in 1981, holds a Ph.D. degree and has completed his post-doctoral research at the University of Tokyo. He is a senior engineer and a recipient of the National Excellent Young Scientist award. Yang Xuelin's research focuses on GaN-based power electronic materials and devices. He has made significant achievements in areas such as MOCVD epitaxial growth of GaN-based materials on Si substrates. He has published over 70 SCI papers and has applied for/granted 13 national invention patents.